Surface recombination velocity in Si wafers by photoinduced thermal emission

Applied Physics Letters

Volumn 89, Issue 5, 2006, Pages

  Malyutenko, V ^a   Chyrchyk, S ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ENERGY GAP; HIGH TEMPERATURE EFFECTS; OPTICAL PROPERTIES; PHOTOCHEMICAL REACTIONS; SURFACE PHENOMENA; SURFACE TREATMENT;

ROOM TEMPERATURE; SURFACE RECOMBINATION VELOCITY; THERMAL EMISSION;

SILICON WAFERS;

EID: 33748474065     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2236467     Document Type: Article

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