Responding to the challenge: Materials design for immersion lithography

Journal of Photopolymer Science and Technology

Volumn 19, Issue 4, 2006, Pages 555-563

  Padmanaban, Munirathna ^a   Romano, Andrew ^a   Lin, Guanyang ^a   Chiu, Simon ^a   Timko, Allen ^a   Houlihan, Frank ^a   Rahman, Dalil ^a   Dammel, Ralph R ^a   Turnquest, Karen ^b   Rich, Georgia ^b   Schuetter, Scott D ^c   Shedd, Timothy A ^c   Nellis, Gregory A ^c  

^a AZ Electronic Materials USA Corp   (United States)

^b SEMATECH   (United States)

^c University of Wisconsin Madison   (United States)

Author keywords

193 nm photoresist; AZ resist; DOF; High contact angle polymers; Immersion lithography; Top coats

Indexed keywords

EID: 33748469702     PISSN: 09149244     EISSN: 13496336     Source Type: Journal    
DOI: 10.2494/photopolymer.19.555     Document Type: Article

References (6)

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2. R. Dammel, G. Pawlowski, A. Romano, F.Houlihan, W-K. Kim, R. Sakamuri, D. Abdallah, M. Padmanaban, D. Rahman, and D. McKenzie, J. Photopolym. Sci. & Tech., 18, No. 5, 593, 2005.
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6. S.D. Schuetter, T.A.Shedd, K. A. Doxtator, G.F. Nellis, C.K. Van Peski., "Characterization of Resist Materials for Use in Immersion Lithography" International Sematech RAG/ITAG meeting, January 25, 2006.