Resist development status for immersion lithography

Journal of Photopolymer Science and Technology

Volumn 18, Issue 5, 2005, Pages 641-645

  Tsuji, Hiromitsu ^a   Yoshida, Masaaki ^a   Ishizuka, Keita ^a   Hirano, Tomoyuki ^a   Endo, Kotaro ^a   Ohmori, Katsumi ^a  

^a TOKYO OHKA KOGYO CO LTD   (Japan)

Author keywords

Chemically amplification positive tone resist; Elution; Immersion lithography; Photo acid generator (PAG)

Indexed keywords

EID: 22144474428     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.18.641     Document Type: Article

References (5)

1. M. Sato: "TOK Resist & Material Development Status for Immersion Lithography", Litho Forum in Los Angeles, January, 2004
2. M. Yoshida, K. Endo, K. Ishizuka and M. Sato: J. Photopolym. Sci. Technol. 17 (2004) 603
3. B. Streefkerk, J. Baselmans, W. G. ansem, J. Mulkens, C. Hoogendam, M. Hoogendorp, D. Flagello, H. Sewell and P. Braeupner: Proc. SPIE 5377 (2004) 285.
4. W. Hinsberg, G. Wallraff, C. Larson, B. Davis, V. Deline, S. Raoux, D. Millar, F. Houle, H. John, L. Sundberg, R. Dammel, W. Conley: Proc. SPIE 5376 (2004) 25.
5. K. Ishizuka, K. Endo, H. Tsuji, M. Yoshida, T. Hirano and M. Sato: "New Cover Material Development Status for Immersion Lithography", International Symposium on Immersion and 157nm Lithography in Vancouver, August, 2004.