Mechanism of argon treatment on a growing surface in layer-by-layer deposition of hydrogenated amorphous silicon

Journal of Non-Crystalline Solids

Volumn 299-302, Issue , 2002, Pages 74-78

  Biebericher, A C W ^a   Van der Weg, W F ^a   Goedheer, W J ^b   Rath, J K ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

^b FOM INSTITUTE FOR PLASMA PHYSICS RIJNHUIZEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CRYSTAL GROWTH; ENERGY GAP; HYDROGENATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

HYDROGENATED AMORPHOUS SILICON;

AMORPHOUS SILICON;

EID: 0036539185     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(01)01179-6     Document Type: Article

References (8)