Effects of dopants on the electrical behavior of grain boundary in metal-induced crystallized polysilicon film

IEEE Transactions on Electron Devices

Volumn 52, Issue 8, 2005, Pages 1917-1919

  Chan, Alain C K ^a   Cheng, C F ^a   Chan, Mansun ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Polysilicon; Thin film transistor (TFT)

Indexed keywords

CRYSTALLIZATION; ELECTRIC PROPERTIES; GRAIN BOUNDARIES; LEAKAGE CURRENTS; MOSFET DEVICES; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; THIN FILM TRANSISTORS;

LARGE GRAIN POLYSILICON ON INSULATOR (LPSOI) FILM; METAL INDUCED LATERAL CRYSTALLIZATION (MILC);

POLYSILICON;

EID: 23344451093     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.852735     Document Type: Article

References (4)

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