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Volumn 100, Issue 4, 2006, Pages
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Electronic transport mechanism for nonalloyed Ti-based Ohmic contacts to n-AlGaN
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC RESISTANCE;
ELECTRON TRANSPORT PROPERTIES;
OHMIC CONTACTS;
POINT DEFECTS;
ALGAN CONTACTS;
FIELD EMISSION MODE;
SELF COMPENSATION;
TUNNELING MODEL;
SEMICONDUCTING ALUMINUM COMPOUNDS;
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EID: 33748302264
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2335507 Document Type: Article |
Times cited : (11)
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References (18)
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