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33748299713
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Lucovsky G., and Popescu M. (Eds), INOE Publishing House, Bucharest
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Tanaka K. In: Lucovsky G., and Popescu M. (Eds). Optoelectronic Materials and Devices vol. 1 (2004), INOE Publishing House, Bucharest 43
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4
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33748290496
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Photo-induced Metastability in Amorphous Semiconductors
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Gonzales-Leal, J.M.1
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Elliott, S.R.4
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Kawazoe, H.6
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13
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33748293264
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note
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2. For band-gap light of 6.4 eV, the penetration depth was ∼10 μm. However, the present glass ingots were very fragile, and accordingly, 25 μm-thick samples were inspected instead. In some cases, samples were exposed to light at both surfaces to enhance exposure effects. For γ-rays, the penetration depth was estimated to be ∼5 cm, and thick samples could be employed.
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15
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33748304652
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Jackson J.M., Wells M.E., Kordas G., Kinser D.L., Weeks R.A., and Magruder III R.H. J. Appl. Phys. 58 (1985) 2309
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Magruder III, R.H.6
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16
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33748301088
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note
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For this calculation, absorption coefficients are taken from Fig. 1.
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22
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4243307821
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Hosono H., Abe Y., Kinser D.L., Weeks R.A., Muta K., and Kawazoe H. Phys. Rev. B 46 (1992) 11445
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0033728333
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Silin, A.5
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31
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0037376837
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Kartopu G., Bayliss S.C., Karavanskii V.A., Curry R.J., Turan R., and Sapelkin A.V. J. Lumines. 101 (2003) 275
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Sapelkin, A.V.6
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32
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0242271822
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Trukhin A.N., Jansons J., Fitting H.-J., Barfels T., and Schmidt B. J. Non-Cryst. Solids 331 (2003) 91
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Trukhin, A.N.1
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33
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0037128683
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35
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33748307877
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note
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Thickness changes by 3.5 eV light were not examined, and the change could not be evaluated for γ-ray, since a knife edge or a pin hole was needed for step measurements.
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36
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33748306510
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note
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Such kinetics was not inspected for the 4.6 eV sub-gap excitation due to the limited pulse-repetition rate of 5 Hz.
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42
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0000794348
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Liu F.X., Qian J.Y., Wang X.L., Liu L., and Ming H. Phys. Rev. B 56 (1997) 3066
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45
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33748303251
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note
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4 pulses.
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