Cathodoluminescence decay kinetics in Ge+, Si+, O+ implanted SiO2 layers

Journal of Non-Crystalline Solids

Volumn 331, Issue 1-3, 2003, Pages 91-99

  Trukhin, A N ^a   Jansons, J ^a   Fitting, H J ^b   Barfels, T ^b   Schmidt, B ^c  

^a UNIVERSITY OF LATVIA   (Latvia)

^b UNIVERSITY OF ROSTOCK   (Germany)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CATHODOLUMINESCENCE; CHEMICAL MODIFICATION; GERMANIUM; OXYGEN; SILICON;

DECAY KINETICS;

SILICA;

EID: 0242271822     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2003.08.080     Document Type: Article

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