메뉴 건너뛰기




Volumn 37, Issue 4, 2006, Pages 613-617

Electronic properties of GaN at high-pressure from local density and generalized gradient approximations

Author keywords

Ab initio calculations; Electronic properties; Generalized gradient approximation; High pressure; Local density approximation; Nitrides

Indexed keywords

DEFORMATION; ELECTRONIC PROPERTIES; ENERGY GAP; GRADIENT METHODS; HIGH PRESSURE EFFECTS; PROBABILITY DENSITY FUNCTION; ZINC;

EID: 33748126296     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2005.12.024     Document Type: Article
Times cited : (10)

References (31)
  • 1
    • 0003944184 scopus 로고    scopus 로고
    • Pearton S.J. (Ed), Gordon and Breach, New York
    • In: Pearton S.J. (Ed). GaN and Related Materials (1997), Gordon and Breach, New York
    • (1997) GaN and Related Materials
  • 9
    • 0035037031 scopus 로고    scopus 로고
    • and references cited therein
    • Ackland G.J. Rep. Prog. Phys. 64 (2001) 483 and references cited therein
    • (2001) Rep. Prog. Phys. , vol.64 , pp. 483
    • Ackland, G.J.1
  • 25
    • 0344988258 scopus 로고
    • Semiconductors and semimetals
    • Willardson R.K., and Beer A.C. (Eds), Academic Press, New York
    • Rode D.L. Semiconductors and semimetals. In: Willardson R.K., and Beer A.C. (Eds). Transport Phenomena vol. 10 (1975), Academic Press, New York
    • (1975) Transport Phenomena , vol.10
    • Rode, D.L.1
  • 26
    • 0007044564 scopus 로고
    • and references cited therein
    • Nakwaski W. Physica B 210 (1995) 1 and references cited therein
    • (1995) Physica B , vol.210 , pp. 1
    • Nakwaski, W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.