Interplay between growth kinetics and material quality of cubic GaN

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 235-237

  Ploog, K H ^a   Brandt, O ^a   Yang, H ^a   Menniger, J ^a   Klann, R ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; ENERGY GAP; EXCITONS; MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; PLASMA SOURCES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; STOICHIOMETRY;

CUBIC GALLIUM NITRIDE (GAN); DONOR ACCEPTOR PAIR; FLUX RATIO; INTENSITY TRANSIENTS;

SEMICONDUCTING FILMS;

EID: 0031076047     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00200-6     Document Type: Article

References (8)

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