Stress migration lifetime for Cu interconnects with CoWP-only cap

IEEE Transactions on Device and Materials Reliability

Volumn 6, Issue 2, 2006, Pages 197-202

  Gambino, Jeffrey P ^a,b   Johnson, Christy L ^b   Therrien, Joseph E ^b   Hunt, Douglas B ^b   Wynne, Jean E ^b   Smith, Sean ^c   Mongeon, Stephen A ^b   Pokrinchak, D Philip ^b   Levin, Theodore M ^b  

^a IEEE   (United States)

^b IBM MICROELECTRONICS   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

CoWP; Cu interconnect; Stress migration

Indexed keywords

COWP; CU INTERCONNECT; STRESS MIGRATION;

COPPER; ELECTROMIGRATION; STRESS ANALYSIS; STRIP METAL;

SEMICONDUCTOR MATERIALS;

EID: 33748093083     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2006.876602     Document Type: Conference Paper

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