High reliability Cu interconnection utilizing a low contamination CoWP capping layer

Proceedings of the IEEE 2004 International Interconnect Technology Conference

Volumn , Issue , 2004, Pages 75-77

  Ishigami, T ^a   Kurokawa, T ^a   Kakuhara, Y ^a   Withers, B ^b   Jacobs, J ^b   Kolics, A ^c   Ivanov, I ^c   Sekine, M ^a   Ueno, K ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b NEC Corporation of America   (United States)

^c Blue29   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSTS; COBALT COMPOUNDS; DIFFUSION; ELECTROMIGRATION; PALLADIUM; POTASSIUM; SECONDARY ION MASS SPECTROMETRY; SILICA; TUNGSTEN;

CAR-ELECTRONIC APPLICATION; DAMASCENE FLOWS; RELIABILITY DEVICES; STRESS INDUCED VOIDING (SIV);

COPPER;

EID: 8644266012     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

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2. Y. Matsubara, M. Komuro, T. Onodera, N. Ikarashi, Y. Hayashi, and M. Sekine, Proc. 2003 Symposium on VLSI Technology, 9B-3
3. C.-K. Hu, L. gignac, R. Rosenberg, E. Liniger, J. Rubino, C. Sambucetti, A. Stamper, A. Domenicucci, X. Chen, Microelectronic Eng. 70 (2003) 406
4. T. Ko, C. L. Chang, S. W. Chou, M. W. Lin, C. J. Lin, C.H. Shih, H.W. Su, M.H. Tsai, Winston S. Shue, and M. S. Liang, Proc. 2003 Symposium on VLSI Technology, 8B-3