Magnetron reactive sputtering of TaN and TaON films for EUV mask applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5992, Issue 1, 2005, Pages

  Lee, Kyung M ^a   Tavassoli, Malahat ^a   Stivers, Alan ^a   Lieberman, Barry ^a  

^a INTEL CORPORATION   (United States)

Author keywords

EUV; Sputter deposition; TaN; Tantalum nitride; Tantalum oxinitride; TaON

Indexed keywords

EUV; TANTALUM NITRIDE; TANTALUM OXINITRIDE; TAON;

MASKS; PHOTOLITHOGRAPHY; SURFACE ROUGHNESS; TANTALUM COMPOUNDS; ULTRAVIOLET RADIATION;

MAGNETRON SPUTTERING;

EID: 33644601735     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.625006     Document Type: Conference Paper

References (3)

1. M. Takahashi, T. Ogawa, E. Hoshino, H. Hoko, B.T. Lee, A. Chiba, H. Yamanashi, S. Okazaki, " Tantalum nitride films for the absorber materal of reflective-tupe EUVL mask," Proc. SPIE, 4343, 760-763, 2001,
2. P. Yan, G. Zhang, A. Ma, T. Liang, "TaN EUVL Mask Fabrication and Characterization," Proc. SPIE, 4343, 409-414, 2001,
3. Kenneth C. Racette, Carey T. Williams, Michael J. Lercel, "Characterization and etching of sputter deposited absorber films for extreme ultraviolet lithography (EUVL) masks", Proc. SPIE, 4562, 883-892