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Volumn 39, Issue 5, 2006, Pages 429-435
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Interfaces in heterostructures of AlInGaN/GaN/ Al2O3
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Author keywords
Interface; Nitride semiconductors; Rutherford backscattering channeling; Transmission electron microscopy; X ray diffraction
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Indexed keywords
CRYSTALLINE MATERIALS;
HETEROJUNCTIONS;
INTERFACES (MATERIALS);
NITRIDES;
NUCLEATION;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION;
CHANNELING;
CRYSTALLINE QUALITY;
NITRIDE SEMICONDUCTORS;
QUATERNARY LAYERS;
ALUMINUM COMPOUNDS;
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EID: 33748036280
PISSN: 07496036
EISSN: 10963677
Source Type: Journal
DOI: 10.1016/j.spmi.2005.10.003 Document Type: Article |
Times cited : (3)
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References (11)
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