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Volumn 39, Issue 5, 2006, Pages 429-435

Interfaces in heterostructures of AlInGaN/GaN/ Al2O3

Author keywords

Interface; Nitride semiconductors; Rutherford backscattering channeling; Transmission electron microscopy; X ray diffraction

Indexed keywords

CRYSTALLINE MATERIALS; HETEROJUNCTIONS; INTERFACES (MATERIALS); NITRIDES; NUCLEATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EID: 33748036280     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2005.10.003     Document Type: Article
Times cited : (3)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.