Post-breakdown leakage resistance and its dependence on device area

Microelectronics Reliability

Volumn 46, Issue 9-11, 2006, Pages 1612-1616

  Chen, Tze Wee ^a   Ito, Choshu ^b   Loh, William ^b   Dutton, Robert W ^a  

^a STANFORD UNIVERSITY   (United States)

^b AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; LEAKAGE CURRENTS; VOLTAGE MEASUREMENT;

RAMP VOLTAGE STRESS; STRESS GATE CAPACITORS; SUB-NANOSECOND PULSE; SUB-NANOSECOND PULSES;

MICROELECTRONICS;

EID: 33747806926     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.07.044     Document Type: Article

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