Influence and model of gate oxide breakdown on CMOS inverters

Microelectronics Reliability

Volumn 43, Issue 9-11, 2003, Pages 1439-1444

  Rodriguez R ^a,b   Stathis, J H ^b   Linder, B P ^b   Joshi, R V ^b   Chuang, C T ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CMOS INTEGRATED CIRCUITS; OSCILLATORS (ELECTRONIC); STATIC RANDOM ACCESS STORAGE;

POLARITY;

ELECTRIC INVERTERS;

EID: 18544395099     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00247-6     Document Type: Conference Paper

References (8)

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