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Volumn 109, Issue 10, 1999, Pages 665-669

Growth and optical properties of Dy doped and undoped n-type InSe single crystal

Author keywords

A. Semiconductors; B. Crystal growth; D. Optical properties

Indexed keywords

BINDING ENERGY; CRYSTAL GROWTH; DYSPROSIUM; ENERGY GAP; EXCITONS; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SURFACE ROUGHNESS;

EID: 0033077737     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00613-9     Document Type: Article
Times cited : (24)

References (22)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.