Near K-edge linear attenuation coefficients for amorphous and crystalline GaAs

Radiation Physics and Chemistry

Volumn 66, Issue 1, 2003, Pages 1-6

  Owens, Alan ^a   Mosselmans, J F W ^b   Peacock, A ^a  

^a EUROPEAN SPACE AGENCY   (Netherlands)

^b DARESBURY LABORATORY   (United Kingdom)

Author keywords

GaAs; K edge; Linear attenuation

Indexed keywords

AMORPHOUS MATERIALS; ATOMS; CRYSTALS; ELECTRONS; PHOTOCURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; STOICHIOMETRY; SYNCHROTRON RADIATION;

DARESBURY;

ATTENUATION;

GALLIUM ARSENIDE;

ARTICLE; ATTENUATION; CHEMICAL STRUCTURE; ELECTRON; ENVIRONMENT; STOICHIOMETRY; SYNCHROTRON RADIATION;

EID: 0346037315     PISSN: 0969806X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0969-806X(02)00328-6     Document Type: Article

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