Directional growth of Si nanowires on insulating films by electric-field-assisted metal-induced lateral crystallization

Materials Research Society Symposium Proceedings

Volumn 891, Issue , 2006, Pages 257-262

  Kanno, Hiroshi ^a   Kenjo, Atsushi ^a   Sadoh, Taizoh ^a   Miyao, Masanobu ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CATHODES; ELECTRIC FIELDS; INSULATING MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

DIRECTIONAL GROWTH; GROWTH VELOCITY; LATERAL CRYSTALLIZATION; LOW-TEMPERATURE ANNEALING;

NANOSTRUCTURED MATERIALS;

EID: 33747367995     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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