Chemical vapor deposition mechanism of copper films on silicon substrates

Chinese Journal of Chemical Physics

Volumn 19, Issue 3, 2006, Pages

  Wu, Song ^a   Tao, Bo ^a   Shen, Yong Ping ^a   Wang, Qi ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Copper film; Deposition reaction mechanism; Metal organic chemical vapor deposition; Silicon (100)

Indexed keywords

ATOMIC FORCE MICROSCOPY; COPPER OXIDES; DISSOCIATION; INDUSTRIAL CHEMICALS; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; REDOX REACTIONS; SCANNING ELECTRON MICROSCOPY; SILICON; SILICON COMPOUNDS; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); CHEMICAL VAPOR DEPOSITIONS (CVD); COPPER FILMS; DEPOSITION REACTION MECHANISM; METAL ORGANIC; SILICON (100); THERMAL DISSOCIATION; VOLMER-WEBER MODES;

COPPER METALLOGRAPHY;

EID: 33747176295     PISSN: 16740068     EISSN: None     Source Type: Journal    
DOI: 10.1360/cjcp2006.19(3).248.5     Document Type: Article

References (24)

1. C. Y. Chang and S. M. Sze, ULSI Technology, New York: McGraw-Hill, 371 (1996).
2. S. Gandikota, S. Voss, R. Tao, A. Duboust, D. Cong, L. Y. Chen, S. Ramaswami and D. Carl, Microelectr. Engng. 50(1-4), 501 (2000).
3. S. Kim, J. M. Park and D. J. Choi, Thin Solid Films 320, 95 (1998).
4. D. Bollmann, R. Merke and A. Klumpp, Microelectr. Engng. 37/38, 105 (1997).
5. S. Y. Chang, C. W. Lin, H. H. Hsu, J. H. Fang and S. J. Lin, J. Electrochem. Soc. 151, C81 (2004).
6. H. H. Hsu, K. H. Lin, S. J. Lin and J. W. Yeh, J. Electrochem. Soc, 148, C47 (2001).
7. T. O. Ogurtani and E. E. Oren, J. Appl. Phys. 96, 7246 (2004).
8. S. P. Paul, Nature 406, 1023 (2000).
9. T. L. Alford, Thin Solid Film 262(1-2), vii (1995).
10. B. Zheng, G. Braeckelmann, K. Kujawski, I. Lou, S. Lane and A. E. Kaloyeros, J. Electrochem. Soc. 142, 3896 (1995).
11. D. H. Kim, R. H. Wentorf and W. N. Gill, J. Electrochem. Soc. 140, 3267 (1993).
12. S. Mukhopadhyay, K. Shalini, R. Lakshmi, A. Devi and S. A. Shivashankar, Surf. Coat. Tech. 150, 205 (2002).
13. F. Shi, X. Ye, W. Yao and L. Cao, Chin. J. Chem. Phys. 11(3), 261 (1998).
14. R. L. Puurunen, Chem. Vap. Deposition 10, 159 (2004).
15. F. C. Frank and J. H. van der Merwe, Proc. R. Soc. London Ser. A 198, 205 (1949).
16. M. Volmer and A. Z. Weber, Phys. Chem. 119, 277 (1926).
17. I. N. Stranski and V. L. Krastanov, Akad. Wiss. Lit. Mainz Math. Naturwiss K1. Kar-Auguat-Forest Lec. 146, 797 (1939).
18. C. Roland and G. H. Gilmer, Phys. Rev. B 47, 16286 (1993).
19. J. A. T. Norman, D. A. Roberts, A. K. Hochberg, P. Smith, G. A. Petersen, J. E. Parmeter, C. A. Apblett and T. R. Omstead, Thin Solid Films 262, 46 (1995).
20. S. Qi, J. Lv, Y. Zhang, S. Yang, Y. Wang and J. Wang, Chin. J. Chem. Phys. 14, 459 (2001).
21. D. Ren, W. Wang, Y. Li and R. Yan, Chin. J. Chem. Phys. 17, 87 (2004).
22. J. Q. Wang, XPS/AES/UPS, Beijing: National Defense Industry Press 519 (1992).
23. N. S. Borgharkar, G. L. Griffin, A. James and A. W. Maverick, Thin Solid Films 320, 86 (1998).
24. K. Hanaoka, K. Tachibana, H. Ohnishi, Thin Solid Films 262, 209 (1995).