Studies of oxidation on GaAs(100) surface by XPS

Chinese Journal of Chemical Physics

Volumn 17, Issue 1, 2004, Pages 87-90

  Ren, Diansheng ^a,b   Wang, Wei ^a   Li, Yuchen ^b   Yan, Ruyue ^b  

^a TIANJIN UNIVERSITY   (China)

^b Tianjin Electron Mat Institute   (China)

Author keywords

GaAs; Surface oxidation; XPS

Indexed keywords

ATOMIC RATIO; CHEMICAL STATES; GAAS; SURFACE OXIDATION;

COMPOSITION; ELECTRONS; EXCITONS; OXIDATION; STOICHIOMETRY; ULTRAVIOLET RADIATION; VELOCITY MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM COMPOUNDS;

EID: 2542576229     PISSN: 16740068     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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