Depth profiling of emerging materials for semiconductor devices

Applied Surface Science

Volumn 252, Issue 19, 2006, Pages 7201-7204

  Ronsheim, P A ^a  

^a IBM   (United States)

Author keywords

Depth profiling; Semiconductor materials; SIMS

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; ELECTRODES; PERMITTIVITY; SECONDARY ION MASS SPECTROMETRY; SILICON;

DEPTH PROFILING; FULLY SILICIDED GATE ELECTRODES ( FUSI); METAL GATES;

SEMICONDUCTOR DEVICES;

EID: 33747173083     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.02.124     Document Type: Article

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