Photoluminescent intensity from porous silicon depends on current density during anodization

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 3 A, 1997, Pages

  Ohmukai, Masato ^a   Tsutsumi, Yasuo ^a  

^a NATIONAL INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CHARGE TRANSFER; CURRENT DENSITY; PHOTOLUMINESCENCE;

PHOTOLUMINESCENT INTENSITY;

POROUS SILICON;

EID: 0031102453     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l292     Document Type: Article

References (14)