Exploring the novel characteristics of heteromaterial gate fieldeffect transistors (HMGFET's) with gatematerial engineering

IEEE Transactions on Electron Devices

Volumn 47, Issue 1, 2000, Pages 113120-

  Zhou, Xing ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Asymmetric mosfet; Asymmetric spacer; Channellength modulation; Draininduced barrierlowering; Gatematerial engineering; Heteromaterial gate fet

Indexed keywords

EID: 33747109881     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (18)

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