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Volumn 54, Issue 9, 2006, Pages 1929-1951

The continuum elastic and atomistic viewpoints on the formation volume and strain energy of a point defect

Author keywords

Anisotropic elasticity Green's function; Dipole tensor; Interstitial; Periodic boundaries; Vacancy

Indexed keywords

ANISOTROPY; BOUNDARY CONDITIONS; CONTINUUM MECHANICS; ELASTICITY; POINT DEFECTS; STRAIN CONTROL;

EID: 33746897314     PISSN: 00225096     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmps.2006.02.007     Document Type: Article
Times cited : (30)

References (21)
  • 1
    • 0001353241 scopus 로고    scopus 로고
    • Vacancy in silison revisited: structure and pressure effects
    • Antonelli A., Chadi D.J., and Kaxiras E. Vacancy in silison revisited: structure and pressure effects. Phys. Rev. Lett. 81 (1998) 2088
    • (1998) Phys. Rev. Lett. , vol.81 , pp. 2088
    • Antonelli, A.1    Chadi, D.J.2    Kaxiras, E.3
  • 2
    • 0000775581 scopus 로고    scopus 로고
    • Thermodynamics of diffusion under pressure and stress: relation to point defect mechanisms
    • Aziz M.J. Thermodynamics of diffusion under pressure and stress: relation to point defect mechanisms. Appl. Phys. Lett. 70 (1997) 2810
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 2810
    • Aziz, M.J.1
  • 3
    • 0000005946 scopus 로고
    • The activation strain tensor: nonhydrostatic stress effects on crystal-growth kinetics
    • Aziz M.J., Sabin P.C., and Lu G. The activation strain tensor: nonhydrostatic stress effects on crystal-growth kinetics. Phys. Rev. B 44 (1991) 9812
    • (1991) Phys. Rev. B , vol.44 , pp. 9812
    • Aziz, M.J.1    Sabin, P.C.2    Lu, G.3
  • 4
    • 33748850018 scopus 로고
    • Comaprative study of silicon empirical interatomic potentials
    • Balamane H., Haliocioglu T., and Tiller W.A. Comaprative study of silicon empirical interatomic potentials. Phys. Rev. B 46 (1992) 2250-2279
    • (1992) Phys. Rev. B , vol.46 , pp. 2250-2279
    • Balamane, H.1    Haliocioglu, T.2    Tiller, W.A.3
  • 5
    • 84983834461 scopus 로고
    • The precise evaluation of derivatives of anisotropic elastic Green's functions
    • Barnett D.M. The precise evaluation of derivatives of anisotropic elastic Green's functions. Phys. Status Solidi B 59 (1972) 741
    • (1972) Phys. Status Solidi B , vol.59 , pp. 741
    • Barnett, D.M.1
  • 6
    • 33746887572 scopus 로고    scopus 로고
    • Barnett, D.M., 2004. Private communication.
  • 7
    • 33746863122 scopus 로고    scopus 로고
    • Cahn, J.W., 1979. Thermodynamics of solid and fluid interfaces. In: Johnson, W.C., Blakely, J.M. (Eds.), Interfacial Segregation. American Society for Metals, pp. 3-22.
  • 8
    • 0035878440 scopus 로고    scopus 로고
    • Effect of stress on dopant and defect diffusion in Si: a general treatment
    • Daw M.S., Windl W., Carlson N.N., Laudon M., and Masquelier M.P. Effect of stress on dopant and defect diffusion in Si: a general treatment. Phys. Rev. B 64 (2001) 045205
    • (2001) Phys. Rev. B , vol.64 , pp. 045205
    • Daw, M.S.1    Windl, W.2    Carlson, N.N.3    Laudon, M.4    Masquelier, M.P.5
  • 9
    • 0000929676 scopus 로고
    • The determination of the elastic field of an ellipsoidal inclusion and related problems
    • Eshelby J.D. The determination of the elastic field of an ellipsoidal inclusion and related problems. Proc. R. Soc. London Ser. A 241 1226 (1957) 376
    • (1957) Proc. R. Soc. London Ser. A , vol.241 , Issue.1226 , pp. 376
    • Eshelby, J.D.1
  • 10
    • 0001857341 scopus 로고
    • Elastic inclusions and inhomogeneities
    • Hill R., and Sneddon J. (Eds), North-Holland Publishing Co., Amsterdam
    • Eshelby J.D. Elastic inclusions and inhomogeneities. In: Hill R., and Sneddon J. (Eds). Progress in Solid Mechanics (1961), North-Holland Publishing Co., Amsterdam 89
    • (1961) Progress in Solid Mechanics , pp. 89
    • Eshelby, J.D.1
  • 14
    • 0344549792 scopus 로고    scopus 로고
    • On the dependence of adatom interactions on strain
    • Kukta R.V., Liu P., and Kouris D. On the dependence of adatom interactions on strain. J. Mech. Phys. Solids 51 (2003) 2149
    • (2003) J. Mech. Phys. Solids , vol.51 , pp. 2149
    • Kukta, R.V.1    Liu, P.2    Kouris, D.3
  • 15
    • 0032208286 scopus 로고    scopus 로고
    • An atomistic interpretation of interface stress
    • Nix W.D., and Gao H. An atomistic interpretation of interface stress. Scr. Mat. 39 (1998) 1653
    • (1998) Scr. Mat. , vol.39 , pp. 1653
    • Nix, W.D.1    Gao, H.2
  • 16
    • 84918192222 scopus 로고
    • Anelasticity and stress-induced ordering of point defects in crystals
    • Nowick A.S., and Heller W.R. Anelasticity and stress-induced ordering of point defects in crystals. Adv. Phys. 12 (1963) 251
    • (1963) Adv. Phys. , vol.12 , pp. 251
    • Nowick, A.S.1    Heller, W.R.2
  • 17
    • 0037441243 scopus 로고    scopus 로고
    • Improving the convergence of defect calculations in supercells: an ab initio study of the neutral silicon vacancy
    • Probert M.I.J., and Payne M.C. Improving the convergence of defect calculations in supercells: an ab initio study of the neutral silicon vacancy. Phys. Rev. B 67 (2003) 075204
    • (2003) Phys. Rev. B , vol.67 , pp. 075204
    • Probert, M.I.J.1    Payne, M.C.2
  • 18
    • 0001059762 scopus 로고    scopus 로고
    • Convergence of supercell calculations for point defects in semiconductors: vacancy in silicon
    • Puska M.J., Pöykkö S., Pesola M., and Nieminen R.M. Convergence of supercell calculations for point defects in semiconductors: vacancy in silicon. Phys. Rev. B 58 (1998) 1318
    • (1998) Phys. Rev. B , vol.58 , pp. 1318
    • Puska, M.J.1    Pöykkö, S.2    Pesola, M.3    Nieminen, R.M.4
  • 19
    • 4243754961 scopus 로고
    • Computer simulation of order in condensed phases of silicon
    • Stillinger F.H., and Weber T.A. Computer simulation of order in condensed phases of silicon. Phys. Rev. B 31 (1985) 5262
    • (1985) Phys. Rev. B , vol.31 , pp. 5262
    • Stillinger, F.H.1    Weber, T.A.2
  • 20
    • 0002042669 scopus 로고    scopus 로고
    • Activation volume for boron diffusion in silicon and implications for strained films
    • Zhao Y., Aziz M.J., Gossman H.J., Mitha S., and Schiferl D. Activation volume for boron diffusion in silicon and implications for strained films. Appl. Phys. Lett. 74 (1999) 31
    • (1999) Appl. Phys. Lett. , vol.74 , pp. 31
    • Zhao, Y.1    Aziz, M.J.2    Gossman, H.J.3    Mitha, S.4    Schiferl, D.5
  • 21
    • 0001606242 scopus 로고    scopus 로고
    • Activation volume for antimony diffusion in silicon and implications for strained films
    • Zhao Y., Aziz M.J., Gossman H.J., Mitha S., and Schiferl D. Activation volume for antimony diffusion in silicon and implications for strained films. Appl. Phys. Lett. 75 (1999) 941
    • (1999) Appl. Phys. Lett. , vol.75 , pp. 941
    • Zhao, Y.1    Aziz, M.J.2    Gossman, H.J.3    Mitha, S.4    Schiferl, D.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.