Effects of different potential barriers on the structural and optical properties of GaN/AlxGa1-xN/GaN coupled multiquantum wells

Journal of Applied Physics

Volumn 100, Issue 2, 2006, Pages

  Park, Y S ^a   Park, C M ^a   Hwang, B R ^a   Im, Hyunsik ^a   Kang, T W ^a   Kim, Chang Soo ^b   Noh, Sam Kyu ^b  

^a Dongguk University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; PHOTOLUMINESCENCE; STRAIN MEASUREMENT; X RAY DIFFRACTION;

BAND GAP; BLUESHIFTED; PIEZOELECTRIC FIELD; SCREENING EFFECT;

GALLIUM NITRIDE;

EID: 33746819717     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2213182     Document Type: Article

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