Blue-light emission from molecular-beam-epitaxially grown GaN/Al 0.5Ga0.5N multiple quantum wells with a perturbating layer of Al0.5Ga0.5N monolayers

Applied Physics Letters

Volumn 84, Issue 22, 2004, Pages 4478-4480

  Park, Y S ^a   Lee, Seung Ho ^b   Oh, Jae Eung ^b   Park, Chang Mo ^a   Kang, Tae Won ^a  

^a Dongguk University   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; HETEROJUNCTIONS; LIGHT EMISSION; MONOLAYERS; PERTURBATION TECHNIQUES; PHOTOLUMINESCENCE; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

ENERGY TRANSITIONS; MULTIPLE QUANTUM WELLS (MQW); POLARIZATION INDUCED ELECTRIC FIELDS; QUANTUM CONFINED STARK EFFECT (QCSE);

GALLIUM NITRIDE;

EID: 3042697127     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1755836     Document Type: Article

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