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Volumn 20, Issue 8, 2005, Pages 775-778
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Structural and optical properties of GaN/AlGaN multiquantum wells with an AlGaN insertion monolayer in the GaN well
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Author keywords
[No Author keywords available]
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Indexed keywords
CATHODOLUMINESCENCE;
CRYSTAL STRUCTURE;
ELECTRIC FIELD EFFECTS;
GALLIUM NITRIDE;
HETEROJUNCTIONS;
LIGHT POLARIZATION;
MONOLAYERS;
PIEZOELECTRICITY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTOR LASERS;
X RAY DIFFRACTION;
BUFFER LAYERS;
MULTIQUANTUM WELLS;
PIEZOELECTRIC FIELDS;
STARK EFFECTS;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 22844435612
PISSN: 02681242
EISSN: None
Source Type: Journal
DOI: 10.1088/0268-1242/20/8/022 Document Type: Article |
Times cited : (8)
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References (12)
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