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Volumn 97, Issue 7, 2005, Pages

Thickness effects of Al0.5 Ga0.5 N barriers on the optical properties of δ-AlGaN -inserted GaN-coupled multiquantum wells

(6) Park, Y S a Park, C M a Lee, S J a Kang, T W a Lee, S H b Oh, Jae Eung b

a Dongguk University (South Korea)

b Hanyang University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BEAM ENERGIES; PHOTOEXCITED ELECTRON-HOLE PAIRS; SAPPHIRE SUBSTRATES; WIDE-BAND-GAP SEMICONDUCTORS;

ALUMINUM NITRIDE; CATHODOLUMINESCENCE; DYE LASERS; EXCITONS; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SAPPHIRE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 17444378232 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1865314 Document Type: Article

Times cited : (8)

References (9)

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