The ferroelectric properties of (Na0.5K0.5)NbO 3 thin films fabricated by rf-magnetron sputtering

Ferroelectrics

Volumn 335, Issue , 2006, Pages 227-232

  Lee, Hai Joon ^a   Ahn, Chang Won ^a   Kang, Sun Hee ^a   Kim, Ill Won ^a   Lee, Jae Shin ^a   Jin, Byung Moon ^b  

^a University of Ulsan   (South Korea)

^b Dong Eui University   (South Korea)

Author keywords

(Na,K)NbO3 thin film; Ferroelectricity; FRAM

Indexed keywords

ANNEALING; FERROELECTRIC CERAMICS; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; NIOBIUM COMPOUNDS; RANDOM ACCESS STORAGE; SILICON;

BIPOLAR SQUARE PULSES; FERROELECTRIC RANDOM ACCESS MEMORY (FRAM); RADIO FREQUENCY MAGNETRON SPUTTERING;

FERROELECTRIC THIN FILMS;

EID: 33746784214     PISSN: 00150193     EISSN: 15635112     Source Type: Conference Proceeding    
DOI: 10.1080/00150190600691460     Document Type: Conference Paper

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