Photocurrent properties of high-sensitivity GaN ultraviolet photodetectors

Chinese Physics

Volumn 12, Issue 7, 2003, Pages 785-788

  Zhou, Jian Jun ^a   Jiang, Ruo Lian ^a   Sha, Jin ^a   Liu, Jie ^a   Shen, Bo ^a   Zhang, Rong ^a   Zheng, You Dou ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

GaN; Photocurrent; Photodetectors; Responsivity

Indexed keywords

PHOTOCURRENTS; PHOTODETECTORS; SAPPHIRE; SEMICONDUCTOR METAL BOUNDARIES; SUBSTRATES; ULTRAVIOLET RADIATION;

RESPONSIVITY; SPECTRUM RESPONSE; ULTRAVIOLET PHOTODETECTORS;

GALLIUM NITRIDE;

EID: 23244456267     PISSN: 10091963     EISSN: None     Source Type: Journal    
DOI: 10.1088/1009-1963/12/7/315     Document Type: Article

References (8)

1. Steyens K S, Kinniburgh M and Beresford R 1995 Appl. Phys. Lett. 66 3518
2. Huang Z C, Chen J, Mott D B and Shu P K 1996 Electron. Lett. 32 1324
3. Walker D, Monroy E, Kung P, Wu J, Hamilton M, Sanchez F J, Diaz J and Razeghi M 1999 Appl. Phys. Lett. 74 762
4. Oder T N, LI J, Lin J Y and Jiang H X 2000 Appl. Phys. Lett. 77 791
5. Monroy E, Calle F, Pau J L. Munoz E and Omnes F 2000 Electron. Lett. 36 2096
6. Zhao Z M, Jiang R L, Chen P, Xi D J, Luo Z Y, Zhang R, Shen B, Chen Z Z and Zheng Y D 2000 Appl. Phys. Lett. 77 444
7. Zhao Z M, Jiang R L, Chen P, Xi D J, Yu H Q, Shen B, Zhang R, Shi Y, Gu S L and Zheng Y D 2001 Appl. Phys. Lett. 79 218
8. Razeghi M and Rogalski A 1996 J. Appl. Phys. 79 7433