Thermal performance of collector-up HBTs for small high-power amplifiers with a novel thermal via structure underneath the HBT fingers

IEEE Transactions on Components and Packaging Technologies

Volumn 28, Issue 1, 2005, Pages 34-38

  Osone, Yasuo ^a   Mochizuki, Kazuhiro ^a   Tanaka, Ken'ichi ^a  

^a HITACHI LTD   (Japan)

Author keywords

Heterojunction bipolar transistor (HBT); High power amplifier (HPA)

Indexed keywords

COMPUTER SIMULATION; FINITE ELEMENT METHOD; HEAT RESISTANCE; MATHEMATICAL MODELS; MOBILE TELECOMMUNICATION SYSTEMS; OPTIMIZATION; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; TEMPERATURE DISTRIBUTION; THERMOANALYSIS;

HIGH POWER AMPLIFIER; PLATED HEAT SINK;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 15744381910     PISSN: 15213331     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCAPT.2005.843435     Document Type: Article

References (8)

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