An InGaP/GaAs collector-up tunneling-collector HBT and sub-transistor via-hole structure for small and highly efficient power amplifiers

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2003, Pages 2197-2200

  Tanaka, K ^a   Mochizuki, K ^a   Takubo, C ^a   Matsumoto, H ^a   Tanoue, T ^a   Ohbu, I ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL CONDUCTIVITY;

MICROWAVE APPLICATIONS;

POWER AMPLIFIERS;

EID: 0042591466     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. W. Liu, A. Khatibzadeh, J. Sweder, and H. F. Chau, "The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction biplolar transistor", IEEE Trans. Electron Devices, pp. 245-251, 43, 1996.
2. J. Ph. Fraysse, O. Vendier, M. Soulard, and P. Auxemery, "2W Ku-band Coplanar MMIC HPA using HBT for Flip-Chip Assembly", 2002 IEEE MTT-S Int. Microwave Symp. Dig., pp. 441-444, 2002.
3. H. Kroemer, "Heterostructure bipolar transistors: What shall we build?", J. Vac. Sci. Technol. B, pp. 126-130, 1, 1983.
4. K. Mochizuki, R. J. Welty, P. M. Asbeck, C. R. Lutz, R. E. Welser, S. J. Whitney, and N. Pan, "GaInP/GaAs collector-up tunneling-collector heterojunction bipolar transistors (C-up TC-HBTS): optimization of fabrication process and epitaxial layer structure for high-efficiency high power amplifiers", IEEE Trans. Electron Devices, pp. 2277-2283, 47, 2000.
5. W. Liu, S. Nelson, D. G. Hill, and A. Khatizadeh,"Current gain collapse in microwave multifmger heterojunction bipolar transistors operated at very high power densities", IEEE Trans. Electron Devices, pp. 1917-1927 40, 1993.
6. N. Miyazawa, H. Itoh, Y. Nakasha, T. Iwai, T. Miyazawa, S. Ohara, and K. Joshin, "0.2 cc HBT Power Amplifier Module with 40% Power-added Efficiency for 1.95 GHz Wide-band CDMA Cellular Phones", 7999 IEEE MTT-S Int. Microwave Symp. Dig., pp. 1099-1102, 1999.