GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors with underneath via-hole structure

Electronics Letters

Volumn 39, Issue 3, 2003, Pages 326-327

  Tanaka, K ^a   Mochizuki, K ^a   Yamada, H ^a   Takubo, C ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRODES; ELECTRON TUNNELING; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM COMPOUNDS;

BALLAST RESISTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0037421750     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030213     Document Type: Article

References (5)

1. JIANN, S.Y.: 'SiGe, GaAs, InP heterojunction bipolar transistors' (John Wiley & Sons, Inc, 1999), pp. 92-105
2. LIU, W., KHATIBZADEH, A., SWEDER, J., and CHAU, H.F.: 'The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction biplolar transistor', IEEE Trans. Electron Devices, 1996, 43, (2), pp. 245-251
3. KROEMER, H.: 'Heterostructure bipolar transistors: what shall we build?', Vac. Sci. Technol. B, 1983, 1, pp. 126-130
4. MOCHIZUKI, K., WELTY, R.J., ASBECK, P.M., LUTZ, C.R., WELSER, R.E., WHITNEY, S.J., and PAN, N.: 'GaInP/GaAs collector-up tunneling-collector heterojunction bipolar transistors (C-up TC-HBTS): optimization of fabrication process and epitaxial layer structure for high-efficiency high power amplifiers', IEEE Trans. Electron Devices, 2000, 47, (12), pp. 2277-2283
5. LIU, W., NELSON, S., HILL, D.G., and KHATIBZADEH, A.: 'Current gain collapse in microwave multifinger heterojunction bipolar transistors operated at very high power densities', IEEE Trans. Electron Devices, 1993, 40, (11), pp. 1917-1927