Impact of stoichiometry control in double junction memory on future scaling

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 897-900

  Ohba, Ryuji ^a   Mitani, Yuichiro ^a   Sugiyama, Naoharu ^a   Fujita, Shinobu ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; OXIDES; PERMITTIVITY; PROBABILITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR JUNCTIONS; SILICON NITRIDE; STOICHIOMETRY; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC NUMBER RATIO; DOUBLE JUNCTION MEMORY; STOICHIOMETRY CONTROL; TRAP MEMORY;

DATA STORAGE EQUIPMENT; TUNNEL JUNCTIONS;

DISCRETE-TRAP MEMORY; DOUBLE JUNCTION MEMORY; DOUBLE-TUNNEL JUNCTIONS; ELECTRON NUMBER DENSITIES; LOW FIELD; SCALINGS; STOICHIOMETRY CONTROL; TRAPPED ELECTRONS; TUNNEL OXIDES;

EID: 21644432269     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. R. Ohba et al. Digest of VLSI Tech. 2003 p.35)
2. R. Ohba et al.,: IEEE Trans, on ED, 49 (2002) 1392:
3. H.Grabert et al., Single charge tunneling (Plemum) (1992)