Comprehensive modeling of diffused quantum-well vertical-cavity surface-emitting lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 4, 1998, Pages 715-722

  Man, W M ^a   Yu, S F ^a,b,c,d,e,f  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

^c ROBINSON COLLEGE   (United Kingdom)

^d Department of Electronic Engineering   (Hong Kong)

^e Cambridge Commonwealth Trust Society

^f OPTICAL SOCIETY OF AMERICA   (United States)

Author keywords

Interdiffusion; Laser modeling; Quantum well semiconductor lasers; Vertical cavity surface emitting lasers

Indexed keywords

ABSORPTION; ANNEALING; CARRIER CONCENTRATION; CRYSTAL IMPURITIES; ELECTRIC CONDUCTIVITY OF SOLIDS; INTERDIFFUSION (SOLIDS); ION IMPLANTATION; LASER MODES; NUMERICAL METHODS; REFRACTIVE INDEX; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM WELLS;

VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0032120204     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.720484     Document Type: Article

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