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Volumn 5737, Issue , 2005, Pages 132-141

Internal device physics of 1.3μm vertical cavity surface emitting laser

Author keywords

Electro Opto Thermal Simulation; Tunnel Junction; VCSEL

Indexed keywords

DISTRIBUTED BRAGG REFLECTORS (DBR); ELECTRO-OPTO-THERMAL SIMULATIONS; INTRA-CAVITY RING CONTACTS; OPTICAL CONFINEMENT;

EID: 21844459206     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.584571     Document Type: Conference Paper
Times cited : (3)

References (9)
  • 3
    • 33947108194 scopus 로고    scopus 로고
    • ISE TCAD Release 9.5
    • Synopsys Switzerland Ltd., Zürich, Switzerland, DESSIS Manual, 2004. ISE TCAD Release 9.5.
    • (2004) DESSIS Manual
  • 5
    • 0026819795 scopus 로고
    • A new recombination model for device simulation including tunneling
    • Feb
    • G. Hurkx, D. Klaassen, and M. Knuvers, "A new recombination model for device simulation including tunneling," IEEE Transactions on Electron Devices 39, pp. 331-338, Feb 1992.
    • (1992) IEEE Transactions on Electron Devices , vol.39 , pp. 331-338
    • Hurkx, G.1    Klaassen, D.2    Knuvers, M.3
  • 7
    • 0026852068 scopus 로고
    • Spatial integration of direct band-to-band tunneling currents in general device structures
    • Apr
    • R. Adar, "Spatial Integration of Direct Band-to-Band Tunneling Currents in General Device Structures," IEEE Transaction on Electron Devices 39, pp. 976-981, Apr 1992.
    • (1992) IEEE Transaction on Electron Devices , vol.39 , pp. 976-981
    • Adar, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.