Single-electron transistor in strained Si/SiGe heterostructures

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 34, Issue 1-2, 2006, Pages 456-459

  Berer, Thomas ^a   Pachinger, Dietmar ^a   Pillwein, Georg ^a   Mühlberger, Michael ^a   Lichtenberger, Herbert ^a   Brunthaler, Gerhard ^a   Schaffler F ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

EP2DS 16; SET; Silicon Silicon Germanium

Indexed keywords

ELECTRON GAS; ELECTRON TRANSITIONS; HETEROJUNCTIONS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS; SILICON; SILICON COMPOUNDS;

EP2DS-16; GATE VOLTAGE; SET; SILICON/SILICON-GERMANIUM;

TRANSISTORS;

EID: 33746409535     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2006.03.016     Document Type: Article

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