High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

Electronics Letters

Volumn 40, Issue 12, 2004, Pages 775-776

  Shiojima, K ^a   Makimura, T ^a   Kosugi, T ^a   Sugitani, S ^a   Shigekawa, N ^a   Ishikawa, H ^b   Egawa, T ^b  

^a NTT CORPORATION   (Japan)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNAS; CHEMICAL VAPOR DEPOSITION; HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; OHMIC CONTACTS; REACTIVE ION ETCHING; SILICON CARBIDE; WIRELESS TELECOMMUNICATION SYSTEMS;

BREAKDOWN FIELDS; HIGH-CONVERSION-GAIN MIXERS; SATURATION VELOCITY; WAFER BENDING;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 3042691894     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20040512     Document Type: Article

References (6)

1. Foutz, B.E., Eastman, L.F., Bhapkar, U.V, and Shur, M.S.: 'Comparison of high field electron transport in GaN and GaAs', Appl. Phys. Lett., 1997, 70, (21), pp. 2849-2851
2. Joshin, K., Kikkawa, T., Hayashi, H., Maniwa, T., Yokokawa, S., Yokoyama, M., Adachi, N., and Takikawa, M: 'A 174 W high-efficiency GaN HEMT power amplifier for W-CDMA base station applications'. IEEE Int. Electron Devices Mtg. Tech. Dig., Washington, DC, USA, 2003, pp. 983-985
3. Wu, Y.-F., Chavarkar, P.M., Moore, M., Parikh, P., and Mishra, U.K.: 'Bias-dependent performance of high-power AlGaN/GaN HEMTs'. IEEE Int. Electron Devices Mtg. Tech. Dig., Washington, DC, USA, 2001, pp. 378-380
4. Sugiura, T., Honji, K., and Tsuji, T.: '12-GHz-bamd GaAs dual-gate MESFET monolithic mixers', IEEE Trans. Microw. Theory Tech., 1985, MTT-33, (2), pp. 105-110
5. Chen, C.-H., Krishnamurthy, K., Keller, S., Parish, G., Rodwell, M., Mishra, U.K., and Wu, Y.-E: 'AlGaN/GaN dual-gate modulation-doped field-effect transistors', Electron. Lett., 1999, 35, (11), pp. 933-935
6. Shiojima, K., and Shigekawa, N.: 'Thermal stability of sheet resistance in AlGaN/GaN 2DEG structure', Phys. Status Solidi C, 2002, 0, (1), pp. 397-400