TEM analyses of wurtzite InGaN islands grown by MOVPE and MBE

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1679-1682

  Pretorius, A ^a   Yamaguchi, T ^a   Kubel C ^b   Kroger, R ^a   Hommel, D ^a   Rosenauer, A ^a  

^a UNIVERSITY OF BREMEN   (Germany)

^b FRAUNHOFER INSTITUTE FOR MANUFACTURING TECHNOLOGY AND ADVANCED MATERIALS IFAM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GROWN ISLAND; NOMINAL CAP LAYER; 68.37.LP; 68.55.NQ; 81.05.EA; 81.07.TA; 81.15.GH; 81.15.HI;

CRYSTAL GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; MICROSTRUCTURE; RELAXATION PROCESSES; MOLECULAR BEAM EPITAXY; TRANSMISSION ELECTRON MICROSCOPY; ZINC SULFIDE;

SEMICONDUCTING INDIUM COMPOUNDS; EPITAXIAL GROWTH;

EID: 33746341492     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565333     Document Type: Conference Paper

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