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Volumn 3, Issue , 2006, Pages 1846-1849
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Observation of a filled electronic state in the conduction band of InN
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Author keywords
[No Author keywords available]
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Indexed keywords
CONDUCTION BAND;
INN FILMS;
OPTICAL BAND GAP;
OXYGEN INCORPORATION;
71.20.NR;
71.55.EQ;
79.60.BM;
BURSTEIN-MOSS SHIFT;
EPILAYERS GROWN;
HARD X-RAY PHOTOEMISSION SPECTROSCOPY;
TEMPERATURE-INDUCED;
CARRIER CONCENTRATION;
ELECTRONIC STRUCTURE;
ENERGY GAP;
FILM GROWTH;
MOLECULAR BEAM EPITAXY;
X RAY PHOTOELECTRON SPECTROSCOPY;
CONDUCTION BANDS;
EPITAXIAL GROWTH;
GROWTH TEMPERATURE;
OXYGEN;
PHOTOELECTRON SPECTROSCOPY;
INDIUM COMPOUNDS;
ELECTRONIC STATES;
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EID: 33746340598
PISSN: 18626351
EISSN: None
Source Type: Journal
DOI: 10.1002/pssc.200565214 Document Type: Conference Paper |
Times cited : (7)
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References (7)
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