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Volumn 49, Issue 2, 2005, Pages 257-266

A novel interband-resonant tunneling diode (I-RTD) based high-frequency oscillator

Author keywords

Interband tunneling; Intrinsic instability; Resonant tunneling diodes; Terahertz oscillator; Type II heterostructures

Indexed keywords

CURRENT DENSITY; DIODES; ELECTRIC POTENTIAL; ELECTROMAGNETIC WAVES; HETEROJUNCTIONS; NATURAL FREQUENCIES; OSCILLATORS (ELECTRONIC);

EID: 9544238120     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.09.001     Document Type: Article
Times cited : (16)

References (11)
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    • Zhao P, Woolard DL, Cui HL. Multisubband theory for the origination of intrinsic oscillations within double-barrier quantum well systems. Phy Rev B 2003;67:085312;
    • (2003) Phy Rev B , vol.67 , pp. 085312
    • Zhao, P.1    Woolard, D.L.2    Cui, H.L.3
  • 5
    • 0037957006 scopus 로고    scopus 로고
    • Qrigin of intrinsic oscillations in double-barrier quantum-well systems
    • Zhao P, Woolard DL, Cui HL, Horing NJM. Qrigin of intrinsic oscillations in double-barrier quantum-well systems. Phys Lett A 2003;311:432-7.
    • (2003) Phys Lett A , vol.311 , pp. 432-437
    • Zhao, P.1    Woolard, D.L.2    Cui, H.L.3    Horing, N.J.M.4
  • 7
    • 0031558597 scopus 로고    scopus 로고
    • An interband tunneling high-frequency source
    • Buot FA. An interband tunneling high-frequency source. J Phys D: Appl Phys 1997;30:3016-20.
    • (1997) J Phys D: Appl Phys , vol.30 , pp. 3016-3020
    • Buot, F.A.1
  • 8
    • 0032315202 scopus 로고    scopus 로고
    • An interband tunnel oscillator: Intrinsic bistability and hysteresis of trapped hole charge in a double-barrier structure
    • Buot FA. An interband tunnel oscillator: intrinsic bistability and hysteresis of trapped hole charge in a double-barrier structure. VLSI Des 1998:8:237-45.
    • (1998) VLSI des , vol.8 , pp. 237-245
    • Buot, F.A.1
  • 9
    • 0036779171 scopus 로고    scopus 로고
    • Electron transport within resonant tunneling diodes with staggered-bandgap heterostructures
    • Gelmont B, Woolard D, Zhang W, Globus T. Electron transport within resonant tunneling diodes with staggered-bandgap heterostructures. Solid State Electron 2002;46:1513-8.
    • (2002) Solid State Electron , vol.46 , pp. 1513-1518
    • Gelmont, B.1    Woolard, D.2    Zhang, W.3    Globus, T.4
  • 10
    • 33644619454 scopus 로고    scopus 로고
    • Advanced theory of instabilities in tunneling nanostructures
    • Singapore: World Scientific; [chapter 8]
    • Woolard DL et al. Advanced theory of instabilities in tunneling nanostructures. Terahertz sensing technology, vol. II. Singapore: World Scientific; 2003 [chapter 8].
    • (2003) Terahertz Sensing Technology , vol.2
    • Woolard, D.L.1
  • 11
    • 0000795365 scopus 로고
    • Three-band Kane model and Auger recombination
    • Gelmont BL. Three-band Kane model and Auger recombination. Sov Phys JETP 1978;48(2):268-72.
    • (1978) Sov Phys JETP , vol.48 , Issue.2 , pp. 268-272
    • Gelmont, B.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.