Crystal structure, electronic structure and physical properties of the new low-valent thallium silicon telluride Tl6Si2Te6 in comparison to Tl6Ge2Te6

Journal of Solid State Chemistry

Volumn 179, Issue 8, 2006, Pages 2707-2713

  Assoud, Abdeljalil ^a   Soheilnia, Navid ^a   Kleinke, Holger ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

Crystal structure; Electronic structure; Semiconductor; Silicon; Telluride; Thallium

Indexed keywords

CRYSTAL STRUCTURE; CRYSTALLIZATION; DIMERS; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; SEEBECK EFFECT; SEMICONDUCTOR MATERIALS; STOICHIOMETRY;

BAND GAPS; STOICHIOMETRIC RATIO; TITLE COMPOUNDS; TL-TL CONTACTS;

THALLIUM COMPOUNDS;

EID: 33746311537     PISSN: 00224596     EISSN: 1095726X     Source Type: Journal    
DOI: 10.1016/j.jssc.2006.05.029     Document Type: Article

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