The nature of point defects in CdTe

Journal of Electronic Materials

Volumn 35, Issue 6, 2006, Pages 1354-1359

  Fochuk, P ^a   Grill, R ^b   Panchuk, O ^a  

^a CHERNIVTSI NATIONAL UNIVERSITY   (Ukraine)

^b CHARLES UNIVERSITY   (Czech Republic)

Author keywords

CdTe; Hall effect; High temperature; Modeling; Point defects

Indexed keywords

CDTE; HALL EFFECTS; HIGH TEMPERATURE; MODELING;

CRYSTAL GROWTH; ENTHALPY; HALL EFFECT; POINT DEFECTS; SEMICONDUCTING TELLURIUM; THERMAL EFFECTS;

CADMIUM;

EID: 33746255416     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0268-9     Document Type: Conference Paper

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