A combined EPR and modulated photocurrent study of native defects in Bridgman grown vanadium doped cadmium telluride: The case of the tellurium antisite

Semiconductor Science and Technology

Volumn 18, Issue 11, 2003, Pages 919-926

  Verstraeten, D ^a,b   Longeaud, C ^c   Ben Mahmoud, A ^d,e   Von Bardeleben, H J ^d   Launay, J C ^b   Viraphong, O ^b   Lemaire, Ph C ^a  

^a UNIVERSITY OF LIÈGE   (Belgium)

^b INST CHIM MATIERE COND BORDEAUX   (France)

^c UNIV PARIS SUD   (France)

^d SORBONNE UNIVERSITÉ   (France)

^e UNIVERSITY OF SFAX   (Tunisia)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; ELECTRON ENERGY LEVELS; MAGNETIC FIELD EFFECTS; MONOCHROMATORS; PARAMAGNETIC RESONANCE; PHOTOCURRENTS; SEMICONDUCTOR DOPING;

AMPHOTERIC LEVELS; CONDUCTION BANDS; MONOCHROMATIC EXCITATIONS;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0242661902     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/11/303     Document Type: Article

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