Defect engineering in CdTe, based on the total energies of elementary defects

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 458, Issue 1-2, 2001, Pages 85-89

  Babentsov, V ^a   Corregidor, V ^a   Benz, K ^b   Fiederle, M ^b   Feltgen, T ^b   Dieguez E ^a  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b UNIVERSITY OF FREIBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; FERMI LEVEL; GRAPH THEORY; POINT DEFECTS; SEMICONDUCTING CADMIUM TELLURIDE;

DEEP LEVEL DONOR; TELLERIUM ANTISITE; VACANCIES;

RADIATION DETECTORS;

EID: 0035250959     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(00)00924-4     Document Type: Article

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