High-temperature point defect equilibrium in CdTe modelling

Journal of Crystal Growth

Volumn 197, Issue 3, 1999, Pages 603-606

  Fochuk, P ^a   Korovyanko, O ^a   Panchuk, O ^a  

^a CHERNIVTSI NATIONAL UNIVERSITY   (Ukraine)

Author keywords

CdTe; Defects; High temperature electroconductivity; In; Models

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; POINT DEFECTS; SEMICONDUCTING INDIUM; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; STOICHIOMETRY; VAPOR PRESSURE;

HIGH TEMPERATURE ELECTROCONDUCTIVITY;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0033514134     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00797-0     Document Type: Article

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