Hot carrier degradation in LDMOS power transistors

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 2004, Pages 283-286

  Cheng, Chih Chang ^a   Wu, J W ^a   Lee, C C ^a   Shao, J H ^a   Wang, T ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Hot carrier; Impact ionization; LDMOS; Power device

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; ELECTRONS; IMPACT IONIZATION; POLYSILICON; PROBABILITY; RELIABILITY; TRANSISTORS;

DRAIN CURRENTS; LDMOS; POWER DEVICES; SAFE OPERATION AREA (SOA);

HOT CARRIERS;

EID: 14844315707     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. R. Versari et al., "Experimental Study of Hot-Carrier Effects in LDMOS Transistors," IEEE Trans. Electron Dev., p.1228, 1999
2. R. Versari et al., "Hot-Carrier Reliability in Submicrometer LDMOS Transistors," IEEE IEDM, p.371, 1997
3. P. Moens et al., "A Novel Hot-Hole Injection Degradation Model for Lateral nDMOS Transistors," IEEE IEDM, p. 285, 2001
4. D. Brisbin et al., "Hot Carrier Reliability of N-LDMOS Transistor Arrays for Power BiCMOS Applications," IEEE IRPS, p. 105, 2002
5. Medici User's Manual, Avanti, 1999