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Volumn 46, Issue 8, 2006, Pages 1285-1294

On-chip electrostatic discharge protection for CMOS gas sensor systems-on-a-chip (SoC)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SENSORS; CMOS INTEGRATED CIRCUITS; ELECTROSTATICS; LEAKAGE CURRENTS; MICROELECTROMECHANICAL DEVICES; MICROMACHINING; THYRISTORS;

EID: 33746189562     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2005.12.002     Document Type: Article
Times cited : (11)

References (12)
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    • Tin oxide gas sensor fabricated using CMOS micro-hotplates and in-situ processing
    • Suehle J.S., Cavicchi R.E., Gaitan M., and Semancik S. Tin oxide gas sensor fabricated using CMOS micro-hotplates and in-situ processing. IEEE Electron Dev Lett 14 (1993) 118
    • (1993) IEEE Electron Dev Lett , vol.14 , pp. 118
    • Suehle, J.S.1    Cavicchi, R.E.2    Gaitan, M.3    Semancik, S.4
  • 4
    • 17044393440 scopus 로고    scopus 로고
    • Salcedo JA, Liou JJ, Afridi MY, Hefner AR, Varma A. Electrostatic discharge protection for embedded sensor systems-on-a-chip (invited). In: Proceeding of the 206th ECS meeting, 2004.
  • 5
    • 50249170570 scopus 로고    scopus 로고
    • Salcedo JA, Liou JJ, Afridi MY, Hefner AR. Novel electrostatic discharge protection structure for monolithic gas sensor system-on-a-chip. In: IEEE international symposium on circuits and systems (ISCAS) 2005. p. 416.
  • 6
    • 1542331704 scopus 로고    scopus 로고
    • New materials and technologies for micromachined metal oxide gas sensor arrays
    • Wollenstein J., Bottner H., Plaza J., and Cane C. New materials and technologies for micromachined metal oxide gas sensor arrays. IEEE Proc Sens 1 (2002) 404
    • (2002) IEEE Proc Sens , vol.1 , pp. 404
    • Wollenstein, J.1    Bottner, H.2    Plaza, J.3    Cane, C.4
  • 7
    • 0021629272 scopus 로고    scopus 로고
    • Avery LR. Using SCRs as transient protection structures in integrated circuits. EOS/ESD symposium. 1983. p. 177.
  • 8
    • 0034159376 scopus 로고    scopus 로고
    • Cascode LVTSCR with tunable holding voltage for ESD protection in bulk CMOS technology without latch-up danger
    • Ker M.-D., and Chang H. Cascode LVTSCR with tunable holding voltage for ESD protection in bulk CMOS technology without latch-up danger. Solid-State Electron 44 (2000) 425
    • (2000) Solid-State Electron , vol.44 , pp. 425
    • Ker, M.-D.1    Chang, H.2
  • 10
    • 0025953251 scopus 로고
    • A low-voltage triggering SCR for on-chip ESD protection at output and input pads
    • Chatterjee A., and Polgreen T. A low-voltage triggering SCR for on-chip ESD protection at output and input pads. IEEE Electron Dev Lett 12 (1991) 21
    • (1991) IEEE Electron Dev Lett , vol.12 , pp. 21
    • Chatterjee, A.1    Polgreen, T.2
  • 11
    • 4444372557 scopus 로고    scopus 로고
    • Novel and robust silicon controlled rectifier (SCR) based devices for on-chip ESD protection
    • Salcedo J.A., Liou J.J., and Bernier J.C. Novel and robust silicon controlled rectifier (SCR) based devices for on-chip ESD protection. IEEE Electron Dev Lett 25 (2004) 658
    • (2004) IEEE Electron Dev Lett , vol.25 , pp. 658
    • Salcedo, J.A.1    Liou, J.J.2    Bernier, J.C.3
  • 12
    • 33746259472 scopus 로고    scopus 로고
    • Tanner EDA, CES, Tanner tools setups for AMI 1.5 CMOS process (λ = 0.8 μm), 1998.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.