Determination of the density of states in heavily doped regions of silicon solar cells

Solar Energy Materials and Solar Cells

Volumn 65, Issue 1, 2001, Pages 105-110

  Neuhaus, D H ^a   Altermatt, P P ^a   Starrett, R P ^a   Aberle, A G ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL IMPURITIES; ELECTRONIC DENSITY OF STATES; ELECTRONS; FERMI LEVEL; PHOSPHORUS; PHOTOLUMINESCENCE; PHOTOVOLTAIC EFFECTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SPECTROSCOPY;

HEAVY DOPING EFFECTS; IMPURITY BAND; PHOTOVOLTAICS;

SILICON SOLAR CELLS;

EID: 0035194769     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00083-0     Document Type: Article

References (12)

1. Rosenbaum T.F., Milligan R.F., Paalanen M.A., Thomas G.A., Bhatt R.N., Lin W. Phys. Rev. B. 27:1983;7509.
2. Bergensen B., Rotworowski J.A., Eswaran M., Parsons R.R., Jena P. Phys. Rev. B. 14:1976;1633.
3. Schenk A. J. Appl. Phys. 84:1998;3684.
4. Conley J.W., Duke C.B., Mahan G.D., Tiemann J.J. Phys. Rev. 150:1966;466.
5. Conley J.W., Mahan G.D. Phys. Rev. 161:1967;681.
6. Mahan G.D., Conley J.W. Appl. Phys. Lett. 11:1967;29.
7. Abdurakhmanov K.P., Mirakhmedov S., Teshabaev A., Khudaiberdiev S.S. Sov. Phys. Semicond. 10:1976;393.
8. Abdurakhmanov K.P., Mirkhmedov S., Teshabaev A.T. Sov. Phys. Semicond. 12:1978;457.
9. Nish izawa J., Kimura M. Jap. J. Appl. Phys. 14:1975;1529.
10. Mieghem P.V. Rev. Mod. Phys. 64:1992;755.
11. Abdurakhmanov K.P., Kotov B.A., Okuneva N.M., Plachenova É.L., Usov O.A. Sov. Phys. Solid State. 14:1973;2234.
12. D.H. Neuhaus, P.P. Altermatt, A. Schenk, A.G. Aberle, 28th IEEE PVSC, Anchorage, 2000, submitted.